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DSASW00201765.pdf
Manufacturer
Infineon Technologies
Partial File Text
Application Note, Rev. 1.0, November 2008 Application Note No. 169 BFP740 SiGe:C Ultra Low Noise RF Transistor in 5 6 GHz LNA Application with 15 dB Gain, 1.3 dB Noise Figure & ~ 100 nanosecon
Datasheet Type
Original
ECAD Model
Part Details
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