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Scans-0081518.pdf
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I x Y S CORP 10E » 1 DIXYS MAXIMUM RATINGS Parameter Sym. IXTH19N45 IXTH19N50 IXTM19N45 IXTM19N50 Unit Drain-Source Voltage (1) vdss 450 500 Vdc Drain-Gate Voltage (RGS = 1.0MÃÃ) (1)
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ECAD Model
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10V 2A MOSFET N-channel
19n50
ID 48 Megamos
IXTH19N45
IXTH19N50
IXTM19N45
IXTM19N50
megamos
megamos 13
megamos 48
N-channel MOSFET 800v to-247
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