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DSAEDA000123582.pdf
Manufacturer
IXYS
Partial File Text
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE(sat) ⤠3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ra
Type
Original
ECAD Model
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