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    DASF008402.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1d
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    DASF008402.pdf preview Download Datasheet

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    TIM6472-35SL

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