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    ScansEX28072.pdf

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    • - FLC307XP - GaAs FET & HEMT Chips FEATURES • High Output Power: P1dB = 34.8dBm(Typ.) • High Gain: G1dB = 9.5dB(Typ.) • High PAE: r^ = 37%(Typ.) • Proven Reliability DESCRIPTION The
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    • FLC307XP FLC307XP

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