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    DSA0096248.pdf

    • Toshiba
    • TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 39 dBm at 5.3 GHz to 5.9 GHz · High gain - G1dB = 8.5 dB at 5.3 GHz to 5
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