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    DSAZIHA100020315.pdf

    • American Microsemiconductor
    • EN2222 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)800m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(CBO) Max. (A).05uØ
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