DSASW00347515.pdf
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Eudyna Devices
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FSU02LG
General Purpose GaAs FET
FEATURES
· High Output Power: P1dB = 23.0dBm (Typ.)@2GHz
· High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz
· Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz
· Low Bias
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Original
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