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    DSAEDA000117209.pdf

    • International Rectifier
    • IRG7IC18FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 7.5A, TC = 100°C tSC ≥ 3μs, TJ(max) = 150°C G VCE(on) typ. = 1.60V @ Ic = 10A
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