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    DSAZIHA100017351.pdf

    • American Microsemiconductor
    • 2N1008B Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)15u
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