The Datasheet Archive
Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
Search
DSA2IH00206546.pdf
Manufacturer
Not Available
Partial File Text
TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz · High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz ·
Type
Scan
ECAD Model
DSA2IH00206546.pdf preview
Download Datasheet
Price & Stock Powered by
Findchips