DSA2IH00206546.pdf

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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz · High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz ·
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DSA2IH00206546.pdf preview Download Datasheet