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    Scans-0062372.pdf

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    • International S Rectifier PD-9.649A IRFI640G HEXFET® Power MOSFET • Isolated Package • High Voltage lsolation= 2.5KVRMS © • Sink to Lead Creepage Dist.= 4.8mm • Dynamic dv/dt Ratin
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    • SIHFI640G-E3 IRFI640GPBF

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    IRFI640G

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