DSAZIHA100057257.pdf
- American Microsemiconductor
- ECG327 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V
- Original
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