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DSA0074418.pdf
Manufacturer
Samsung Electronics
Partial File Text
SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Ch
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ECAD Model
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gs 05
SSH10N90A