BF510 datasheet
- NXP Semiconductors
- BF510 - N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 0.7 to 3 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 0.8 V; VDSmax: 20 V; YFS: 2.5 ms
- Original
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