DSA2IH00205874.pdf

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Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR M ICROW AVE POW ER GaAs FET TECHNICAL DATA FEATURES: H IG H POWER P jjg = 2 4 dBm at f = 8 G H z H IG H GAIN Gj^jg = 8 dB st f = 8 GHz ' , JS8835-AS
Datasheet Type Scan
ECAD Model

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