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    DSA0074423.pdf

    • Samsung Electronics
    • SSH4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate C
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    DSA0074423.pdf preview Download Datasheet

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