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DSAISS00094624.pdf
Manufacturer
Toshiba
Partial File Text
GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE(sat) = 8.0V (Ma
Type
Original
ECAD Model
Part Details
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