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DSAIHSC000104816.pdf
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TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs (X, Ku-Band) Features ⢠High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz ⢠High gain - G1dB = 7.5 dB at
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ECAD Model
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