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    DSA00761055.pdf

    • Toshiba
    • TC58NVG0S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bit
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