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    Scans-0067283.pdf

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    • DISCRIPTION 2SC3019 is silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band. FEATURES • High power gain: Gpe ^ 14dB @P0 = 0.5W, f = 520MHz, Vcc = 12.5V â
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    2SC3019
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