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DSA0097743.pdf
Manufacturer
Infineon Technologies
Partial File Text
IPB123N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS · Excellent gate charge x R DS(on) product (FOM) V R DS(on),max · N-channel, normal level 100 12.3
Type
Original
ECAD Model
Part Details
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123N10N
IEC61249-2-21
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