Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA00201876.pdf

    • NEC
    • High Power N-Channel Silicon MOSFET For Cellular Base Stations FEATURES NEM0995F01-30 3rd Order INTERMODULATION DISTORTION AND DRAIN CURRENT vs. OUTPUT POWER · HIGH LINEAR GAIN: 12 dB · H
    • Original
    • Part pricing, stock, data attributes from Findchips.com

    DSA00201876.pdf preview Download Datasheet

    User Tagged Keywords

    LARGE SIGNAL IMPEDANCES NEM0995F01-30
    Price & Stock Powered by Findchips
    Supplyframe Tracking Pixel