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    DSAZIHA100020086.pdf

    • American Microsemiconductor
    • BDB02D Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10
    • Original
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    DSAZIHA100020086.pdf preview Download Datasheet

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