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    DSAZIHA1000301062.pdf

    • ON Semiconductor
    • MBR2535CTL SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxi
    • Original
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    DSAZIHA1000301062.pdf preview Download Datasheet

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