DSA2IH00125969.pdf

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Partial File Text PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHz, Vce = 3.6 V, Class AB, Duty 1/8 4 PIN MINI MOLD PACKAGE: NE68939
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