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    DSA00763648.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8996-30 TECHNICAL DATA FEATURES HIGH POWER P1dB=45.0dBm at 8.9GHz to 9.6GHz HIGH GAIN G1dB=7.0dB at 8.9GHz to 9.6GHz BROAD BAND INTERNALLY
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    DSA00763648.pdf preview Download Datasheet

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