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    DSAISS00017702.pdf

    • Infineon Technologies
    • NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • TO-18, Bo
    • Original
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    DSAISS00017702.pdf preview Download Datasheet

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