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    DSASW0046692.pdf

    • IMP
    • ® ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effec
    • Original
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    DSASW0046692.pdf preview Download Datasheet

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