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DSAIH00060779.pdf
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aixYS MegaMOSTMFET IXTH/IXTM 50N20 VD S S lD 2 5 ^D S(on) = 200 V = 50 A = ^ N-Channel Enhancement Mode Symbol VDSS V oor Vos v t gsm ' d 25 >OM Test Conditions T j =25°C to150°C T J
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ECAD Model
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d2s diode
IXTH50N20
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