DSA0076624.pdf

Manufacturer Toshiba
Partial File Text TOSHIBA TIM1414-15L MICROWAVE POWER GaAs FET PRELIMINARY Features · Low intermodulation distortion - IM3 = -45 dBc at Po = 30.0 dBm, Single Carrier Level · High power - P1dB = 42.0 dBm at 14
Type Original
ECAD Model
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