Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA00354520.pdf

    • Infineon Technologies
    • A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Bo
    • Original
    • Part pricing, stock, data attributes from Findchips.com

    DSA00354520.pdf preview Download Datasheet

    User Tagged Keywords

    cascode miller capacitance cascode mosfet switching cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high cascode transistor array DMOS SiC igbt ohm Vce infineon IGBT THEORY AND APPLICATIONS Infineon power diffusion process ISPSD-99 jfet cascode jfet p channel switch JFET siced MOSFET IGBT THEORY AND APPLICATIONS normally off SiC-JFET RESURF trench MOSFET SiC IGBT High Power Modules SiC JFET SiC jfet cascode sic wafer 100 mm SiC-JFET siced static characteristics of mosfet and igbt thermal perfomance SiC IGBT vertical JFET
    Price & Stock Powered by Findchips

    Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel