DSAZIHA100060002.pdf
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American Microsemiconductor
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1N3846 Thyristors
Four-Layer (Shockley) Diode
V(BO) Min. (V)90
V(BO) Max. (V)110
I(S) Max. (A)125u
I(TRM) Max. (A)10
@ t(w) (s) (Test Condition)10u
I(TSM) Max. (A)
V(R) Max. (V)60
I(H) Max. (
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Original
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