DSA0073256.pdf
-
Samsung Electronics
-
IRLZ34A
Advanced Power MOSFET
FEATURES
BVDSS = 60 V
Logic-Level Gate Drive
RDS(on) = 0.046
Avalanche Rugged Technology
Rugged Gate Oxide Technology
ID = 30 A
Lower Input Capaci
-
Original
-
-
Part pricing, stock, data attributes from Findchips.com