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    DSASW00201767.pdf

    • Infineon Technologies
    • Application Note, Rev. 1.1, January 2009 Application Note No. 171 BFP740F SiGe:C Ultra Low Noise RF Transistor in 2.4 ­ 2.5 GHz LNA Application with 17 dB Gain, 0.7 dB Noise Figure & < 1 microse
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    DSASW00201767.pdf preview Download Datasheet

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