BF1105,215 datasheet
- NXP Semiconductors
- N-channel dual-gate MOS-FETs - CIS TYP: 2.2 pF; COS: 1.2 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 8 to 16 mA; Noise figure: 1.7@800MHz dB; Note: Fully internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1.2 V; V<sub>DS</sub>max: 7 V; Y<sub>FS</sub> min.: 25 mS; Package: SOT143B (SOT4); Container: Tape reel smd
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