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Scans-00132948.pdf
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 yPES 283328, 2N6327, 2N6328 H'P'H SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 1N914 1N914 1 \9 1 4 -)(-? 270 dF ! 30 -i i gen RBB2 - 3 lì; VBB2 = 4 V rl - 2 n Von - 42 V
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ECAD Model
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2N6326
2N6327
2N6328
526529
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