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DSA00183275.pdf
Manufacturer
United Monolithic Semiconductors
Partial File Text
EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT)
Datasheet Type
Original
ECAD Model
Part Details
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DSA00183275.pdf preview
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EC2612
ec2612 pHEMT
pHEMT transistor 30GHz
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