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    DSA00135001.pdf

    • Infineon Technologies
    • BF543 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz IDSS = 4mA, g fs = 12mS preferably in FM applications 2 1 VPS05161 ESD: Electrostatic dis
    • Original
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    DSA00135001.pdf preview Download Datasheet

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