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    DSA2IH00100593.pdf

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    • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F2407A MICROWAVE POWER GaAs FET DESCRIPTION The M G F2407A , power GaAs FET w ith an N-channel schottky gate, is designed fo r use in S to Ku band am pli
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    DSA2IH00100593.pdf preview Download Datasheet

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