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DSASW00389410.pdf
Manufacturer
Toshiba
Partial File Text
TC58NVG2S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024
Type
Original
Part Details
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User Tagged Keywords
DIN2111
hex latch
NAND read disturb
TC58NVG2S3E
TC58NVG2S3ETA00
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