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DSA00307079.pdf
Manufacturer
Hitachi Semiconductor
Partial File Text
4AM16 Silicon N Channel/P Channel Power MOS FET Array Application SP12 High speed power switching Features 1 · Low onresistance N Channel : RDS(on) 0.17, VGS = 10V , ID = 4A P
Type
Original
ECAD Model
Part Details
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2SJ172
2SK970
4AM16