DSA00385114.pdf
- California Eastern Laboratories
- NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) FEATURES DESCRIPTION ยท HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pul
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