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    DSAZIHA100020364.pdf

    • American Microsemiconductor
    • GES6016 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)800m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10nÃ
    • Original
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