DSA00270055.pdf
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PanJit International
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PJD09N03
25V N-Channel Enhancement Mode MOSFET
TO-252
FEATURES
· RDS(ON), VGS@10V,IDS@30A=9m
· RDS(ON), VGS@4.5V,IDS@30A=12m
· Advanced trench process technology
· High Density Cell Design Fo
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Original
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