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DSA00760155.pdf
Manufacturer
Toshiba
Partial File Text
GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications Fourth Generation IGBT Unit: mm · · · · FRD included between emitter an
Type
Original
ECAD Model
Part Details
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DSA00760155.pdf preview
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GT60N32
GT60N321
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