DSAZIHA1000311173.pdf
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Toshiba
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GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON NâCHANNEL IGBT
GT25G101
Unit in mm
STROBE FLASH APPLICATIONS
High Input Impedance
Low Saturation Voltage
: VCE (sat)=8V (Max
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Original
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