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DSA00449447.pdf
Manufacturer
Infineon Technologies
Partial File Text
PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE a
Type
Original
ECAD Model
Part Details
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User Tagged Keywords
BCP56
DD 127 D TRANSISTOR
LM7805
LM7805 smd
PTF081301E
PTF081301F
transistor SMD LOA
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