DSASW0053891.pdf
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International Rectifier
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PD -96297
IRFH5010PbF
HEXFET® Power MOSFET
VDS
100
9.0
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
m
65
1.2
RDS(on) max
V
nC
100
(@Tc(Bottom) = 25°C)
h
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Original
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