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    DASF0051235.pdf

    • Toshiba
    • 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Rating Unit 0.07 M A Maximum (peak) reverse voltage VRM
    • Original
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    DASF0051235.pdf preview Download Datasheet

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    1SS416

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